Technical Document
Specifications
Brand
ams OSRAMWavelength of Peak Sensitivity
880nm
Mounting Type
Surface Mount
Amplifier Function
No
Number of Pins
2
Diode Material
Si
Minimum Wavelength Detected
730nm
Maximum Wavelength Detected
1100nm
Typical Fall Time
0.02µs
Length
4.5mm
Width
4mm
Height
1.2mm
Series
BP 104
Typical Rise Time
0.02µs
Short Circuit Current
16µA
Polarity
Positive
Country of Origin
China
Product details
PIN Photodiode DIL Package
This family of IR photodiodes, from OSRAM Opto Semiconductors, are from the BPW 34 series. They come in surface mount (SMD) or through-hole DIL plastic packages with a radiant sensitive area of 2.65 x 2.65 mm². They BPW 34 IR photodiodes are designed for applications with wavelength range of up to 1100 nm. Other suitable applications include; photointerrupters, IR remote control and automotive sensors, headsets etc.
IR Photodiodes, OSRAM Opto Semiconductors
Stock information temporarily unavailable.
Please check again later.
0.250 OMR
Each (Supplied on a Reel) (ex VAT)
0.262 OMR
Each (Supplied on a Reel) (inc VAT)
20
0.250 OMR
Each (Supplied on a Reel) (ex VAT)
0.262 OMR
Each (Supplied on a Reel) (inc VAT)
20
Technical Document
Specifications
Brand
ams OSRAMWavelength of Peak Sensitivity
880nm
Mounting Type
Surface Mount
Amplifier Function
No
Number of Pins
2
Diode Material
Si
Minimum Wavelength Detected
730nm
Maximum Wavelength Detected
1100nm
Typical Fall Time
0.02µs
Length
4.5mm
Width
4mm
Height
1.2mm
Series
BP 104
Typical Rise Time
0.02µs
Short Circuit Current
16µA
Polarity
Positive
Country of Origin
China
Product details
PIN Photodiode DIL Package
This family of IR photodiodes, from OSRAM Opto Semiconductors, are from the BPW 34 series. They come in surface mount (SMD) or through-hole DIL plastic packages with a radiant sensitive area of 2.65 x 2.65 mm². They BPW 34 IR photodiodes are designed for applications with wavelength range of up to 1100 nm. Other suitable applications include; photointerrupters, IR remote control and automotive sensors, headsets etc.