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SiC N-Channel MOSFET Module, 45 A, 1200 V AG-EASY1B-2 Infineon F423MR12W1M1B76BPSA1

RS Stock No.: 234-8965Brand: InfineonManufacturers Part No.: F423MR12W1M1B76BPSA1
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

45 A

Maximum Drain Source Voltage

1200 V

Package Type

AG-EASY1B-2

Series

F4

Mounting Type

Chassis Mount

Maximum Drain Source Resistance

0.0225 Ω

Maximum Gate Threshold Voltage

5.55V

Transistor Material

SiC

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60.160 OMR

Each (ex VAT)

63.168 OMR

Each (inc. VAT)

SiC N-Channel MOSFET Module, 45 A, 1200 V AG-EASY1B-2 Infineon F423MR12W1M1B76BPSA1
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60.160 OMR

Each (ex VAT)

63.168 OMR

Each (inc. VAT)

SiC N-Channel MOSFET Module, 45 A, 1200 V AG-EASY1B-2 Infineon F423MR12W1M1B76BPSA1
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit price
1 - 460.160 OMR
5 - 959.030 OMR
10 - 1458.750 OMR
15 - 1958.455 OMR
20+58.150 OMR

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

45 A

Maximum Drain Source Voltage

1200 V

Package Type

AG-EASY1B-2

Series

F4

Mounting Type

Chassis Mount

Maximum Drain Source Resistance

0.0225 Ω

Maximum Gate Threshold Voltage

5.55V

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more