Technical Document
Specifications
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
250 V
Series
HiperFET
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
16 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
390 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
11.05mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.41mm
Typical Gate Charge @ Vgs
83 @ 10 V nC
Height
4.83mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.4V
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4.585 OMR
Each (ex VAT)
4.814 OMR
Each (inc VAT)
1
4.585 OMR
Each (ex VAT)
4.814 OMR
Each (inc VAT)
1
Buy in bulk
quantity | Unit price |
---|---|
1 - 4 | 4.585 OMR |
5 - 9 | 4.070 OMR |
10 - 24 | 3.950 OMR |
25+ | 3.855 OMR |
Technical Document
Specifications
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
250 V
Series
HiperFET
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
16 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
390 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
11.05mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.41mm
Typical Gate Charge @ Vgs
83 @ 10 V nC
Height
4.83mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.4V