onsemi NGTB15N60EG IGBT, 30 A 600 V, 3-Pin TO-220, Through Hole
Technical Document
Specifications
Brand
ON SemiconductorMaximum Continuous Collector Current
30 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
117 W
Package Type
TO-220
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
10.28 x 4.82 x 15.75mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Product details
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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0.580 OMR
Each (Supplied in a Tube) (ex VAT)
0.609 OMR
Each (Supplied in a Tube) (inc VAT)
Production pack (Tube)
2
0.580 OMR
Each (Supplied in a Tube) (ex VAT)
0.609 OMR
Each (Supplied in a Tube) (inc VAT)
Production pack (Tube)
2
Buy in bulk
| quantity | Unit price | Per Tube |
|---|---|---|
| 2 - 18 | 0.580 OMR | 1.160 OMR |
| 20+ | 0.515 OMR | 1.030 OMR |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
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Technical Document
Specifications
Brand
ON SemiconductorMaximum Continuous Collector Current
30 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
117 W
Package Type
TO-220
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
10.28 x 4.82 x 15.75mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Product details
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products