Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
7 A
Maximum Collector Emitter Voltage
30 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
40 W
Minimum DC Current Gain
30
Transistor Configuration
Single
Maximum Collector Base Voltage
40 V dc
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
4 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
10.28 x 4.82 x 15.75mm
Maximum Operating Temperature
+150 °C
Country of Origin
China
Product details
NPN Power Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard.
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0.365 OMR
Each (In a Tube of 50) (ex VAT)
0.383 OMR
Each (In a Tube of 50) (inc. VAT)
50
0.365 OMR
Each (In a Tube of 50) (ex VAT)
0.383 OMR
Each (In a Tube of 50) (inc. VAT)
50
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
50 - 50 | 0.365 OMR | 18.250 OMR |
100 - 200 | 0.280 OMR | 14.000 OMR |
250 - 450 | 0.275 OMR | 13.750 OMR |
500 - 950 | 0.245 OMR | 12.250 OMR |
1000+ | 0.205 OMR | 10.250 OMR |
Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
7 A
Maximum Collector Emitter Voltage
30 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
40 W
Minimum DC Current Gain
30
Transistor Configuration
Single
Maximum Collector Base Voltage
40 V dc
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
4 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
10.28 x 4.82 x 15.75mm
Maximum Operating Temperature
+150 °C
Country of Origin
China
Product details
NPN Power Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard.