Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
30 A
Maximum Collector Emitter Voltage
450 V
Package Type
TO-247
Mounting Type
Through Hole
Maximum Power Dissipation
250 W
Minimum DC Current Gain
14
Transistor Configuration
Single
Maximum Collector Base Voltage
1000 V dc
Maximum Emitter Base Voltage
9 V
Maximum Operating Frequency
1 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
16.26 x 5.3 x 21.08mm
Maximum Operating Temperature
+150 °C
Country of Origin
China
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2.195 OMR
Each (In a Tube of 30) (ex VAT)
2.305 OMR
Each (In a Tube of 30) (inc VAT)
30
2.195 OMR
Each (In a Tube of 30) (ex VAT)
2.305 OMR
Each (In a Tube of 30) (inc VAT)
30
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
30 - 90 | 2.195 OMR | 65.850 OMR |
120 - 240 | 1.815 OMR | 54.450 OMR |
270 - 480 | 1.705 OMR | 51.150 OMR |
510+ | 1.605 OMR | 48.150 OMR |
Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
30 A
Maximum Collector Emitter Voltage
450 V
Package Type
TO-247
Mounting Type
Through Hole
Maximum Power Dissipation
250 W
Minimum DC Current Gain
14
Transistor Configuration
Single
Maximum Collector Base Voltage
1000 V dc
Maximum Emitter Base Voltage
9 V
Maximum Operating Frequency
1 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
16.26 x 5.3 x 21.08mm
Maximum Operating Temperature
+150 °C
Country of Origin
China