Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
650 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
110 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
240 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Width
4.82mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
15.87mm
Typical Gate Charge @ Vgs
58 nC @ 10 V
Height
20.82mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Country of Origin
China
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2.340 OMR
Each (In a Tube of 30) (ex VAT)
2.457 OMR
Each (In a Tube of 30) (inc VAT)
30
2.340 OMR
Each (In a Tube of 30) (ex VAT)
2.457 OMR
Each (In a Tube of 30) (inc VAT)
30
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
30 - 90 | 2.340 OMR | 70.200 OMR |
120 - 240 | 2.045 OMR | 61.350 OMR |
270 - 480 | 1.995 OMR | 59.850 OMR |
510 - 990 | 1.940 OMR | 58.200 OMR |
1020+ | 1.910 OMR | 57.300 OMR |
Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
650 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
110 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
240 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Width
4.82mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
15.87mm
Typical Gate Charge @ Vgs
58 nC @ 10 V
Height
20.82mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Country of Origin
China