Technical Document
Specifications
Brand
onsemiMaximum Continuous Collector Current
23 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
100 W
Package Type
TO-220
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
10.67 x 4.83 x 16.51mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Product details
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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1.080 OMR
Each (In a Pack of 5) (ex VAT)
1.134 OMR
Each (In a Pack of 5) (inc VAT)
5
1.080 OMR
Each (In a Pack of 5) (ex VAT)
1.134 OMR
Each (In a Pack of 5) (inc VAT)
5
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
5 - 20 | 1.080 OMR | 5.400 OMR |
25 - 45 | 0.980 OMR | 4.900 OMR |
50 - 120 | 0.920 OMR | 4.600 OMR |
125 - 245 | 0.845 OMR | 4.225 OMR |
250+ | 0.775 OMR | 3.875 OMR |
Technical Document
Specifications
Brand
onsemiMaximum Continuous Collector Current
23 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
100 W
Package Type
TO-220
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
10.67 x 4.83 x 16.51mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Product details
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.