Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
40A
Maximum Drain Source Voltage Vds
650V
Package Type
PowerFLAT
Series
SCTL35N65G2V
Mount Type
Surface
Pin Count
4
Maximum Drain Source Resistance Rds
67mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
73nC
Maximum Power Dissipation Pd
417W
Minimum Operating Temperature
-55°C
Forward Voltage Vf
3.3V
Maximum Operating Temperature
175°C
Length
8.1mm
Height
0.95mm
Standards/Approvals
No
Automotive Standard
No
Product Details
The STMicroelectronics SCTL35N65G2V silicon carbide power MOSFET device has been developed using advanced and innovative 2nd generation SiC MOSFET technology, features remarkably low on-resistance per unit area and very good switching performance.
Stock information temporarily unavailable.
28,129.920 OMR
9.377 OMR Each (On a Reel of 3000) (ex VAT)
29,536.416 OMR
9.846 OMR Each (On a Reel of 3000) (inc. VAT)
3000
28,129.920 OMR
9.377 OMR Each (On a Reel of 3000) (ex VAT)
29,536.416 OMR
9.846 OMR Each (On a Reel of 3000) (inc. VAT)
Stock information temporarily unavailable.
3000
Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
40A
Maximum Drain Source Voltage Vds
650V
Package Type
PowerFLAT
Series
SCTL35N65G2V
Mount Type
Surface
Pin Count
4
Maximum Drain Source Resistance Rds
67mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
73nC
Maximum Power Dissipation Pd
417W
Minimum Operating Temperature
-55°C
Forward Voltage Vf
3.3V
Maximum Operating Temperature
175°C
Length
8.1mm
Height
0.95mm
Standards/Approvals
No
Automotive Standard
No
Product Details
The STMicroelectronics SCTL35N65G2V silicon carbide power MOSFET device has been developed using advanced and innovative 2nd generation SiC MOSFET technology, features remarkably low on-resistance per unit area and very good switching performance.