N-Channel MOSFET, 279 A, 60 V, 3-Pin D2PAK Texas Instruments CSD18535KTTT
Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
279 A
Maximum Drain Source Voltage
60 V
Series
NexFET
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.9 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.4V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
11.33mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.67mm
Typical Gate Charge @ Vgs
140 nC @ 10 V
Height
4.83mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Product details
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
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1.540 OMR
Each (In a Pack of 2) (ex VAT)
1.617 OMR
Each (In a Pack of 2) (inc VAT)
2
1.540 OMR
Each (In a Pack of 2) (ex VAT)
1.617 OMR
Each (In a Pack of 2) (inc VAT)
2
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
2 - 8 | 1.540 OMR | 3.080 OMR |
10+ | 0.845 OMR | 1.690 OMR |
Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
279 A
Maximum Drain Source Voltage
60 V
Series
NexFET
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.9 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.4V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
11.33mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.67mm
Typical Gate Charge @ Vgs
140 nC @ 10 V
Height
4.83mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Product details