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P-Channel MOSFET, 4 A, 30 V, 3-Pin SOT-23 Toshiba SSM3J334R,LF(T

RS Stock No.: 144-5260Brand: ToshibaManufacturers Part No.: SSM3J334R,LF(T
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Technical Document

Specifications

Brand

Toshiba

Channel Type

P

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

136 mΩ

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+20 V

Width

1.8mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

2.9mm

Typical Gate Charge @ Vgs

5.9 nC @ -10 V nC

Height

0.8mm

Country of Origin

Japan

Product details

MOSFET P-Channel, SSM3J Series, Toshiba

MOSFET Transistors, Toshiba

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Stock information temporarily unavailable.

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0.075 OMR

Each (In a Pack of 30) (ex VAT)

0.079 OMR

Each (In a Pack of 30) (inc. VAT)

P-Channel MOSFET, 4 A, 30 V, 3-Pin SOT-23 Toshiba SSM3J334R,LF(T

30

Available in multiples of 30
302.250 OMR
604.500 OMR
906.750 OMR
1209.000 OMR
15010.500 OMR
18012.600 OMR
21014.700 OMR
24016.800 OMR
27018.900 OMR
30021.000 OMR
33023.100 OMR
36025.200 OMR
39027.300 OMR
42029.400 OMR
45031.500 OMR

0.075 OMR

Each (In a Pack of 30) (ex VAT)

0.079 OMR

Each (In a Pack of 30) (inc. VAT)

P-Channel MOSFET, 4 A, 30 V, 3-Pin SOT-23 Toshiba SSM3J334R,LF(T
Stock information temporarily unavailable.

30

Available in multiples of 30
302.250 OMR
604.500 OMR
906.750 OMR
1209.000 OMR
15010.500 OMR
18012.600 OMR
21014.700 OMR
24016.800 OMR
27018.900 OMR
30021.000 OMR
33023.100 OMR
36025.200 OMR
39027.300 OMR
42029.400 OMR
45031.500 OMR

Buy in bulk

quantityUnit pricePer Pack
30 - 1200.075 OMR2.250 OMR
150+0.070 OMR2.100 OMR

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Toshiba

Channel Type

P

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

136 mΩ

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+20 V

Width

1.8mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

2.9mm

Typical Gate Charge @ Vgs

5.9 nC @ -10 V nC

Height

0.8mm

Country of Origin

Japan

Product details

MOSFET P-Channel, SSM3J Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more