Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
7.2 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
49 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
4.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Width
4mm
Transistor Material
Si
Number of Elements per Chip
1
Height
1.55mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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Please check again later.
0.420 OMR
Each (Supplied on a Reel) (ex VAT)
0.441 OMR
Each (Supplied on a Reel) (inc VAT)
Production pack (Reel)
20
0.420 OMR
Each (Supplied on a Reel) (ex VAT)
0.441 OMR
Each (Supplied on a Reel) (inc VAT)
Production pack (Reel)
20
Buy in bulk
quantity | Unit price | Per Reel |
---|---|---|
20 - 80 | 0.420 OMR | 8.400 OMR |
100 - 180 | 0.335 OMR | 6.700 OMR |
200 - 480 | 0.320 OMR | 6.400 OMR |
500 - 980 | 0.305 OMR | 6.100 OMR |
1000+ | 0.285 OMR | 5.700 OMR |
Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
7.2 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
49 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
4.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Width
4mm
Transistor Material
Si
Number of Elements per Chip
1
Height
1.55mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details