Technical Document
Specifications
Brand
DiodesZetexMounting Type
Surface Mount
Package Type
PowerDI 5
Maximum Continuous Forward Current
8A
Peak Reverse Repetitive Voltage
60V
Diode Configuration
Single
Rectifier Type
Schottky Rectifier
Diode Type
Schottky
Pin Count
3
Maximum Forward Voltage Drop
530mV
Number of Elements per Chip
1
Diode Technology
Schottky
Peak Non-Repetitive Forward Surge Current
280A
Country of Origin
China
Product details
Schottky Barrier Diodes, 2A to 9A, Diodes Inc
Super Barrier Rectifiers (SBR) diodes are the next generation of rectifiers. The two terminal device has a lower forward voltage (VF) than comparable Schottky diodes while possessing the thermal stability and high reliability characteristics of PN epitaxial diodes.
Diodes and Rectifiers, Diodes Inc
3.520 OMR
0.352 OMR Each (In a Pack of 10) (ex VAT)
3.696 OMR
0.370 OMR Each (In a Pack of 10) (inc. VAT)
Standard
10
3.520 OMR
0.352 OMR Each (In a Pack of 10) (ex VAT)
3.696 OMR
0.370 OMR Each (In a Pack of 10) (inc. VAT)
Standard
10
Stock information temporarily unavailable.
Please check again later.
Quantity | Unit price | Per Pack |
---|---|---|
10 - 40 | 0.352 OMR | 3.520 OMR |
50 - 240 | 0.231 OMR | 2.310 OMR |
250 - 1240 | 0.226 OMR | 2.255 OMR |
1250 - 2490 | 0.209 OMR | 2.090 OMR |
2500+ | 0.209 OMR | 2.090 OMR |
Technical Document
Specifications
Brand
DiodesZetexMounting Type
Surface Mount
Package Type
PowerDI 5
Maximum Continuous Forward Current
8A
Peak Reverse Repetitive Voltage
60V
Diode Configuration
Single
Rectifier Type
Schottky Rectifier
Diode Type
Schottky
Pin Count
3
Maximum Forward Voltage Drop
530mV
Number of Elements per Chip
1
Diode Technology
Schottky
Peak Non-Repetitive Forward Surge Current
280A
Country of Origin
China
Product details
Schottky Barrier Diodes, 2A to 9A, Diodes Inc
Super Barrier Rectifiers (SBR) diodes are the next generation of rectifiers. The two terminal device has a lower forward voltage (VF) than comparable Schottky diodes while possessing the thermal stability and high reliability characteristics of PN epitaxial diodes.