Infineon N-Channel MOSFET, 1.5 A, 20 V, 3-Pin SOT-323 BSS214NWH6327XTSA1

Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
1.5 A
Maximum Drain Source Voltage
20 V
Series
OptiMOS™
Package Type
SOT-323
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
250 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Minimum Gate Threshold Voltage
0.7V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Width
1.25mm
Transistor Material
Si
Number of Elements per Chip
1
Length
2mm
Typical Gate Charge @ Vgs
0.8 nC @ 5 V
Maximum Operating Temperature
+150 °C
Height
0.8mm
Minimum Operating Temperature
-55 °C
Product details
Infineon OptiMOS™ Small Signal MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
14.438 OMR
0.058 OMR Each (On a Reel of 250) (ex VAT)
15.160 OMR
0.061 OMR Each (On a Reel of 250) (inc. VAT)
250
14.438 OMR
0.058 OMR Each (On a Reel of 250) (ex VAT)
15.160 OMR
0.061 OMR Each (On a Reel of 250) (inc. VAT)
250
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Reel |
---|---|---|
250 - 750 | 0.058 OMR | 14.438 OMR |
1000 - 2750 | 0.047 OMR | 11.812 OMR |
3000 - 5750 | 0.037 OMR | 9.188 OMR |
6000+ | 0.037 OMR | 9.188 OMR |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
1.5 A
Maximum Drain Source Voltage
20 V
Series
OptiMOS™
Package Type
SOT-323
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
250 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Minimum Gate Threshold Voltage
0.7V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Width
1.25mm
Transistor Material
Si
Number of Elements per Chip
1
Length
2mm
Typical Gate Charge @ Vgs
0.8 nC @ 5 V
Maximum Operating Temperature
+150 °C
Height
0.8mm
Minimum Operating Temperature
-55 °C
Product details
Infineon OptiMOS™ Small Signal MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.