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Infineon CoolSiC Silicon N-Channel MOSFET, 39 A, 650 V, 3-Pin TO-247 IMW65R048M1HXKSA1

RS Stock No.: 232-0389Brand: InfineonManufacturers Part No.: IMW65R048M1HXKSA1
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

39 A

Maximum Drain Source Voltage

650 V

Series

CoolSiC

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.064 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.7V

Number of Elements per Chip

1

Transistor Material

Silicon

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Stock information temporarily unavailable.

94.380 OMR

3.146 OMR Each (In a Tube of 30) (ex VAT)

99.099 OMR

3.303 OMR Each (In a Tube of 30) (inc. VAT)

Infineon CoolSiC Silicon N-Channel MOSFET, 39 A, 650 V, 3-Pin TO-247 IMW65R048M1HXKSA1

94.380 OMR

3.146 OMR Each (In a Tube of 30) (ex VAT)

99.099 OMR

3.303 OMR Each (In a Tube of 30) (inc. VAT)

Infineon CoolSiC Silicon N-Channel MOSFET, 39 A, 650 V, 3-Pin TO-247 IMW65R048M1HXKSA1
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Tube
30 - 303.146 OMR94.380 OMR
60 - 602.986 OMR89.595 OMR
90+2.800 OMR83.985 OMR

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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

39 A

Maximum Drain Source Voltage

650 V

Series

CoolSiC

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.064 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.7V

Number of Elements per Chip

1

Transistor Material

Silicon

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more