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Infineon N-Channel MOSFET, 100 A, 150 V, 3-Pin TO-220 IPP075N15N3GXKSA1

RS Stock No.: 170-2323Brand: InfineonManufacturers Part No.: IPP075N15N3GXKSA1
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

150 V

Series

OptiMOS™

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

7.7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Number of Elements per Chip

1

Width

4.57mm

Length

10.36mm

Typical Gate Charge @ Vgs

70 nC @ 10 V

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

11.17mm

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Stock information temporarily unavailable.

5.346 OMR

2.673 OMR Each (In a Pack of 2) (ex VAT)

5.613 OMR

2.807 OMR Each (In a Pack of 2) (inc. VAT)

Infineon N-Channel MOSFET, 100 A, 150 V, 3-Pin TO-220 IPP075N15N3GXKSA1

5.346 OMR

2.673 OMR Each (In a Pack of 2) (ex VAT)

5.613 OMR

2.807 OMR Each (In a Pack of 2) (inc. VAT)

Infineon N-Channel MOSFET, 100 A, 150 V, 3-Pin TO-220 IPP075N15N3GXKSA1
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Pack
2 - 82.673 OMR5.346 OMR
10 - 182.541 OMR5.082 OMR
20 - 482.222 OMR4.444 OMR
50 - 982.057 OMR4.114 OMR
100+1.903 OMR3.806 OMR

Ideate. Create. Collaborate

JOIN FOR FREE

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

150 V

Series

OptiMOS™

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

7.7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Number of Elements per Chip

1

Width

4.57mm

Length

10.36mm

Typical Gate Charge @ Vgs

70 nC @ 10 V

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

11.17mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more