Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
400 mA
Maximum Drain Source Voltage
600 V
Package Type
SOT-223
Series
MDmesh, SuperMESH
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
8.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Minimum Gate Threshold Voltage
2.25V
Maximum Power Dissipation
3.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Length
6.5mm
Maximum Operating Temperature
+150 °C
Width
3.5mm
Transistor Material
Si
Typical Gate Charge @ Vgs
7 nC @ 10 V
Height
1.8mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
4.510 OMR
0.451 OMR Each (In a Pack of 10) (ex VAT)
4.736 OMR
0.474 OMR Each (In a Pack of 10) (inc. VAT)
Standard
10
4.510 OMR
0.451 OMR Each (In a Pack of 10) (ex VAT)
4.736 OMR
0.474 OMR Each (In a Pack of 10) (inc. VAT)
Standard
10
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
10 - 20 | 0.451 OMR | 4.510 OMR |
30 - 90 | 0.429 OMR | 4.290 OMR |
100 - 490 | 0.324 OMR | 3.245 OMR |
500 - 990 | 0.275 OMR | 2.750 OMR |
1000+ | 0.226 OMR | 2.255 OMR |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
400 mA
Maximum Drain Source Voltage
600 V
Package Type
SOT-223
Series
MDmesh, SuperMESH
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
8.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Minimum Gate Threshold Voltage
2.25V
Maximum Power Dissipation
3.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Length
6.5mm
Maximum Operating Temperature
+150 °C
Width
3.5mm
Transistor Material
Si
Typical Gate Charge @ Vgs
7 nC @ 10 V
Height
1.8mm
Minimum Operating Temperature
-55 °C
Product details