Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
29 A
Maximum Drain Source Voltage
600 V
Series
MDmesh
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
105 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
210 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Width
5.15mm
Length
15.75mm
Typical Gate Charge @ Vgs
84 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Height
20.15mm
Product details
N-Channel MDmesh™, 600V/650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
92.400 OMR
3.080 OMR Each (In a Tube of 30) (ex VAT)
97.020 OMR
3.234 OMR Each (In a Tube of 30) (inc. VAT)
30
92.400 OMR
3.080 OMR Each (In a Tube of 30) (ex VAT)
97.020 OMR
3.234 OMR Each (In a Tube of 30) (inc. VAT)
30
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Tube |
---|---|---|
30 - 60 | 3.080 OMR | 92.400 OMR |
90 - 480 | 2.552 OMR | 76.560 OMR |
510 - 960 | 2.255 OMR | 67.650 OMR |
990+ | 1.958 OMR | 58.740 OMR |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
29 A
Maximum Drain Source Voltage
600 V
Series
MDmesh
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
105 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
210 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Width
5.15mm
Length
15.75mm
Typical Gate Charge @ Vgs
84 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Height
20.15mm
Product details