Toshiba DTMOSIV N-Channel MOSFET, 9.7 A, 600 V, 3-Pin TO-220SIS TK10A60W,S4VX(M

Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
9.7 A
Maximum Drain Source Voltage
600 V
Package Type
TO-220SIS
Series
DTMOSIV
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
380 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Minimum Gate Threshold Voltage
2.7V
Maximum Power Dissipation
30 W
Maximum Gate Source Voltage
-30 V, +30 V
Length
10mm
Typical Gate Charge @ Vgs
20 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
4.5mm
Forward Diode Voltage
1.7V
Height
15mm
Country of Origin
Japan
Product details
MOSFET Transistors, Toshiba
2.778 OMR
0.556 OMR Each (In a Pack of 5) (ex VAT)
2.917 OMR
0.584 OMR Each (In a Pack of 5) (inc. VAT)
5
2.778 OMR
0.556 OMR Each (In a Pack of 5) (ex VAT)
2.917 OMR
0.584 OMR Each (In a Pack of 5) (inc. VAT)
5
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
5 - 20 | 0.556 OMR | 2.778 OMR |
25 - 45 | 0.363 OMR | 1.815 OMR |
50 - 120 | 0.358 OMR | 1.788 OMR |
125 - 245 | 0.358 OMR | 1.788 OMR |
250+ | 0.352 OMR | 1.760 OMR |
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
9.7 A
Maximum Drain Source Voltage
600 V
Package Type
TO-220SIS
Series
DTMOSIV
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
380 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Minimum Gate Threshold Voltage
2.7V
Maximum Power Dissipation
30 W
Maximum Gate Source Voltage
-30 V, +30 V
Length
10mm
Typical Gate Charge @ Vgs
20 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
4.5mm
Forward Diode Voltage
1.7V
Height
15mm
Country of Origin
Japan
Product details