Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
4.3 A
Maximum Drain Source Voltage
100 V
Package Type
IPAK (TO-251)
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
540 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
6.1 nC @ 5 V
Width
2.38mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.73mm
Height
6.22mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
3.822 OMR
0.764 OMR Each (In a Pack of 5) (ex VAT)
4.013 OMR
0.802 OMR Each (In a Pack of 5) (inc. VAT)
Standard
5
3.822 OMR
0.764 OMR Each (In a Pack of 5) (ex VAT)
4.013 OMR
0.802 OMR Each (In a Pack of 5) (inc. VAT)
Standard
5
Stock information temporarily unavailable.
Please check again later.
Quantity | Unit price | Per Pack |
---|---|---|
5 - 45 | 0.764 OMR | 3.822 OMR |
50 - 120 | 0.610 OMR | 3.052 OMR |
125 - 245 | 0.572 OMR | 2.860 OMR |
250 - 495 | 0.500 OMR | 2.502 OMR |
500+ | 0.468 OMR | 2.338 OMR |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
4.3 A
Maximum Drain Source Voltage
100 V
Package Type
IPAK (TO-251)
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
540 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
6.1 nC @ 5 V
Width
2.38mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.73mm
Height
6.22mm
Minimum Operating Temperature
-55 °C
Product details