Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
40 V
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
22 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
15.6 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Width
5mm
Transistor Material
Si
Length
5.99mm
Typical Gate Charge @ Vgs
10 nC @ 10 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
2
Height
1.07mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
Dual N-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
5.940 OMR
0.594 OMR Each (In a Pack of 10) (ex VAT)
6.237 OMR
0.624 OMR Each (In a Pack of 10) (inc. VAT)
Standard
10
5.940 OMR
0.594 OMR Each (In a Pack of 10) (ex VAT)
6.237 OMR
0.624 OMR Each (In a Pack of 10) (inc. VAT)
Standard
10
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
10 - 90 | 0.594 OMR | 5.940 OMR |
100 - 240 | 0.561 OMR | 5.610 OMR |
250 - 490 | 0.473 OMR | 4.730 OMR |
500 - 990 | 0.446 OMR | 4.455 OMR |
1000+ | 0.418 OMR | 4.180 OMR |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
40 V
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
22 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
15.6 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Width
5mm
Transistor Material
Si
Length
5.99mm
Typical Gate Charge @ Vgs
10 nC @ 10 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
2
Height
1.07mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details