Technical Document
Specifications
Brand
Fuji ElectricMaximum Continuous Collector Current
300 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
1.47 kW
Package Type
M249
Configuration
Series
Mounting Type
Panel Mount
Channel Type
N
Pin Count
7
Transistor Configuration
Series
Dimensions
108 x 62 x 30mm
Maximum Operating Temperature
+150 °C
Product details
IGBT Discretes, Fuji Electric
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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64.715 OMR
Each (ex VAT)
67.951 OMR
Each (inc VAT)
1
64.715 OMR
Each (ex VAT)
67.951 OMR
Each (inc VAT)
1
Buy in bulk
quantity | Unit price |
---|---|
1 - 4 | 64.715 OMR |
5 - 9 | 58.690 OMR |
10 - 24 | 57.035 OMR |
25+ | 55.955 OMR |
Technical Document
Specifications
Brand
Fuji ElectricMaximum Continuous Collector Current
300 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
1.47 kW
Package Type
M249
Configuration
Series
Mounting Type
Panel Mount
Channel Type
N
Pin Count
7
Transistor Configuration
Series
Dimensions
108 x 62 x 30mm
Maximum Operating Temperature
+150 °C
Product details
IGBT Discretes, Fuji Electric
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.