Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
80 V
Series
BSC070N10NS5
Package Type
TDSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
10.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.8V
Minimum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
83 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
6.35mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.49mm
Typical Gate Charge @ Vgs
30 nC @ 10 V
Height
1.1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Stock information temporarily unavailable.
Please check again later.
0.620 OMR
Each (In a Pack of 10) (ex VAT)
0.651 OMR
Each (In a Pack of 10) (inc VAT)
10
0.620 OMR
Each (In a Pack of 10) (ex VAT)
0.651 OMR
Each (In a Pack of 10) (inc VAT)
10
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
10 - 40 | 0.620 OMR | 6.200 OMR |
50 - 90 | 0.495 OMR | 4.950 OMR |
100 - 240 | 0.465 OMR | 4.650 OMR |
250 - 490 | 0.435 OMR | 4.350 OMR |
500+ | 0.400 OMR | 4.000 OMR |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
80 V
Series
BSC070N10NS5
Package Type
TDSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
10.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.8V
Minimum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
83 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
6.35mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.49mm
Typical Gate Charge @ Vgs
30 nC @ 10 V
Height
1.1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V