IXYS HiperFET, Polar N-Channel MOSFET, 36 A, 500 V, 3-Pin TO-247AD IXFH36N50P
Technical Document
Specifications
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
36 A
Maximum Drain Source Voltage
500 V
Series
HiperFET, Polar
Package Type
TO-247AD
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
170 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
540 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Length
16.26mm
Typical Gate Charge @ Vgs
93 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
5.3mm
Transistor Material
Si
Height
21.46mm
Minimum Operating Temperature
-55 °C
Product details
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
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107.250 OMR
3.575 OMR Each (In a Tube of 30) (ex VAT)
112.612 OMR
3.754 OMR Each (In a Tube of 30) (inc. VAT)
30
107.250 OMR
3.575 OMR Each (In a Tube of 30) (ex VAT)
112.612 OMR
3.754 OMR Each (In a Tube of 30) (inc. VAT)
30
Stock information temporarily unavailable.
Please check again later.
| quantity | Unit price | Per Tube |
|---|---|---|
| 30 - 30 | 3.575 OMR | 107.250 OMR |
| 60 - 120 | 3.432 OMR | 102.960 OMR |
| 150+ | 3.322 OMR | 99.660 OMR |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document
Specifications
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
36 A
Maximum Drain Source Voltage
500 V
Series
HiperFET, Polar
Package Type
TO-247AD
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
170 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
540 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Length
16.26mm
Typical Gate Charge @ Vgs
93 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
5.3mm
Transistor Material
Si
Height
21.46mm
Minimum Operating Temperature
-55 °C
Product details
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products