Technical Document
Specifications
Brand
MagnaChipChannel Type
N
Maximum Continuous Drain Current
1.9 A
Maximum Drain Source Voltage
600 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
4.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
42 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.73mm
Typical Gate Charge @ Vgs
6.7 nC @ 10 V
Width
6.22mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.4V
Height
2.39mm
Country of Origin
China
Product details
High Voltage (HV) MOSFET
High Voltage, N-Channel MOSFET, with low on-state resistance and high switching performance.
MOSFET Transistors, MagnaChip
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0.170 OMR
Each (In a Tube of 50) (ex VAT)
0.178 OMR
Each (In a Tube of 50) (inc VAT)
50
0.170 OMR
Each (In a Tube of 50) (ex VAT)
0.178 OMR
Each (In a Tube of 50) (inc VAT)
50
Technical Document
Specifications
Brand
MagnaChipChannel Type
N
Maximum Continuous Drain Current
1.9 A
Maximum Drain Source Voltage
600 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
4.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
42 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.73mm
Typical Gate Charge @ Vgs
6.7 nC @ 10 V
Width
6.22mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.4V
Height
2.39mm
Country of Origin
China
Product details
High Voltage (HV) MOSFET
High Voltage, N-Channel MOSFET, with low on-state resistance and high switching performance.