Technical Document
Specifications
Brand
NXPChannel Type
N
Idss Drain-Source Cut-off Current
10 to 18mA
Maximum Drain Source Voltage
20 V
Maximum Drain Gate Voltage
20V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23 (TO-236AB)
Pin Count
3
Dimensions
3 x 1.4 x 1mm
Minimum Operating Temperature
-65 °C
Width
1.4mm
Maximum Operating Temperature
+150 °C
Length
3mm
Height
1mm
Country of Origin
China
Product details
N-channel JFET, NXP
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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0.260 OMR
Each (Supplied on a Reel) (ex VAT)
0.273 OMR
Each (Supplied on a Reel) (inc VAT)
10
0.260 OMR
Each (Supplied on a Reel) (ex VAT)
0.273 OMR
Each (Supplied on a Reel) (inc VAT)
10
Buy in bulk
quantity | Unit price | Per Reel |
---|---|---|
10 - 40 | 0.260 OMR | 2.600 OMR |
50 - 90 | 0.235 OMR | 2.350 OMR |
100 - 240 | 0.225 OMR | 2.250 OMR |
250 - 490 | 0.205 OMR | 2.050 OMR |
500+ | 0.190 OMR | 1.900 OMR |
Technical Document
Specifications
Brand
NXPChannel Type
N
Idss Drain-Source Cut-off Current
10 to 18mA
Maximum Drain Source Voltage
20 V
Maximum Drain Gate Voltage
20V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23 (TO-236AB)
Pin Count
3
Dimensions
3 x 1.4 x 1mm
Minimum Operating Temperature
-65 °C
Width
1.4mm
Maximum Operating Temperature
+150 °C
Length
3mm
Height
1mm
Country of Origin
China
Product details
N-channel JFET, NXP
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.