Technical Document
Specifications
Brand
NXPChannel Type
N
Idss Drain-Source Cut-off Current
12 to 30mA
Maximum Drain Source Voltage
25 V
Maximum Gate Source Voltage
-25 V
Maximum Drain Gate Voltage
-25V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
50 Ω
Mounting Type
Surface Mount
Package Type
SOT-23 (TO-236AB)
Pin Count
3
Dimensions
3 x 1.4 x 1mm
Height
1mm
Maximum Operating Temperature
+150 °C
Length
3mm
Width
1.4mm
Minimum Operating Temperature
-65 °C
Country of Origin
China
Product details
N-channel JFET, NXP
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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0.140 OMR
Each (In a Pack of 10) (ex VAT)
0.147 OMR
Each (In a Pack of 10) (inc VAT)
10
0.140 OMR
Each (In a Pack of 10) (ex VAT)
0.147 OMR
Each (In a Pack of 10) (inc VAT)
10
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
10 - 90 | 0.140 OMR | 1.400 OMR |
100 - 190 | 0.125 OMR | 1.250 OMR |
200 - 390 | 0.120 OMR | 1.200 OMR |
400 - 790 | 0.115 OMR | 1.150 OMR |
800+ | 0.100 OMR | 1.000 OMR |
Technical Document
Specifications
Brand
NXPChannel Type
N
Idss Drain-Source Cut-off Current
12 to 30mA
Maximum Drain Source Voltage
25 V
Maximum Gate Source Voltage
-25 V
Maximum Drain Gate Voltage
-25V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
50 Ω
Mounting Type
Surface Mount
Package Type
SOT-23 (TO-236AB)
Pin Count
3
Dimensions
3 x 1.4 x 1mm
Height
1mm
Maximum Operating Temperature
+150 °C
Length
3mm
Width
1.4mm
Minimum Operating Temperature
-65 °C
Country of Origin
China
Product details
N-channel JFET, NXP
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.