Technical Document
Specifications
Number of Elements per Chip
1
Channel Mode
Enhancement
Channel Type
P
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Maximum Gate Source Voltage
-25 V, +25 V
Pin Count
6
Transistor Configuration
Single
Minimum Gate Threshold Voltage
1V
Mounting Type
Surface Mount
Maximum Drain Source Voltage
30 V
Maximum Operating Temperature
+150 °C
Height
0.75mm
Length
2mm
Series
PowerTrench
Width
2mm
Maximum Power Dissipation
2.4 W
Maximum Continuous Drain Current
6.8 A
Package Type
MLP
Maximum Drain Source Resistance
35 mΩ
Brand
ON SemiconductorTypical Gate Charge @ Vgs
16 nC @ 10 V
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0.305 OMR
Each (In a Pack of 5) (ex VAT)
0.320 OMR
Each (In a Pack of 5) (inc VAT)
Standard
5
0.305 OMR
Each (In a Pack of 5) (ex VAT)
0.320 OMR
Each (In a Pack of 5) (inc VAT)
Standard
5
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
5 - 20 | 0.305 OMR | 1.525 OMR |
25 - 95 | 0.250 OMR | 1.250 OMR |
100 - 245 | 0.160 OMR | 0.800 OMR |
250 - 495 | 0.155 OMR | 0.775 OMR |
500+ | 0.150 OMR | 0.750 OMR |
Technical Document
Specifications
Number of Elements per Chip
1
Channel Mode
Enhancement
Channel Type
P
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Maximum Gate Source Voltage
-25 V, +25 V
Pin Count
6
Transistor Configuration
Single
Minimum Gate Threshold Voltage
1V
Mounting Type
Surface Mount
Maximum Drain Source Voltage
30 V
Maximum Operating Temperature
+150 °C
Height
0.75mm
Length
2mm
Series
PowerTrench
Width
2mm
Maximum Power Dissipation
2.4 W
Maximum Continuous Drain Current
6.8 A
Package Type
MLP
Maximum Drain Source Resistance
35 mΩ
Brand
ON SemiconductorTypical Gate Charge @ Vgs
16 nC @ 10 V