Technical Document
Specifications
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
1.8 A
Maximum Drain Source Voltage
150 V
Series
QFET
Package Type
MLPAK33
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
3.6 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
42 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
6.2 nC @ 10 V
Width
3mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3mm
Maximum Operating Temperature
+150 °C
Height
0.95mm
Minimum Operating Temperature
-55 °C
Product details
QFET® P-Channel MOSFET, Fairchild Semiconductor
Fairchild Semiconductors new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
3.300 OMR
0.660 OMR Each (In a Pack of 5) (ex VAT)
3.465 OMR
0.693 OMR Each (In a Pack of 5) (inc. VAT)
Standard
5
3.300 OMR
0.660 OMR Each (In a Pack of 5) (ex VAT)
3.465 OMR
0.693 OMR Each (In a Pack of 5) (inc. VAT)
Stock information temporarily unavailable.
Standard
5
Stock information temporarily unavailable.
Quantity | Unit price | Per Pack |
---|---|---|
5 - 45 | 0.660 OMR | 3.300 OMR |
50 - 95 | 0.566 OMR | 2.832 OMR |
100 - 495 | 0.490 OMR | 2.448 OMR |
500 - 995 | 0.434 OMR | 2.172 OMR |
1000+ | 0.402 OMR | 2.008 OMR |
Technical Document
Specifications
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
1.8 A
Maximum Drain Source Voltage
150 V
Series
QFET
Package Type
MLPAK33
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
3.6 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
42 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
6.2 nC @ 10 V
Width
3mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3mm
Maximum Operating Temperature
+150 °C
Height
0.95mm
Minimum Operating Temperature
-55 °C
Product details
QFET® P-Channel MOSFET, Fairchild Semiconductor
Fairchild Semiconductors new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.