onsemi UltraFET N-Channel MOSFET, 20 A, 200 V, 8-Pin PQFN8 FDMS2672

RS Stock No.: 864-4816Brand: onsemiManufacturers Part No.: FDMS2672
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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

200 V

Series

UltraFET

Package Type

PQFN8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

156 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

78 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

5mm

Typical Gate Charge @ Vgs

30 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

6mm

Transistor Material

Si

Height

0.75mm

Minimum Operating Temperature

-55 °C

Product details

UltraFET® MOSFET, Fairchild Semiconductor

UItraFET® Trench MOSFET combine characteristics that enable benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge.
Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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Stock information temporarily unavailable.

1,914.000 OMR

0.638 OMR Each (On a Reel of 3000) (ex VAT)

2,009.700 OMR

0.670 OMR Each (On a Reel of 3000) (inc. VAT)

onsemi UltraFET N-Channel MOSFET, 20 A, 200 V, 8-Pin PQFN8 FDMS2672

1,914.000 OMR

0.638 OMR Each (On a Reel of 3000) (ex VAT)

2,009.700 OMR

0.670 OMR Each (On a Reel of 3000) (inc. VAT)

onsemi UltraFET N-Channel MOSFET, 20 A, 200 V, 8-Pin PQFN8 FDMS2672
Stock information temporarily unavailable.

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

200 V

Series

UltraFET

Package Type

PQFN8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

156 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

78 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

5mm

Typical Gate Charge @ Vgs

30 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

6mm

Transistor Material

Si

Height

0.75mm

Minimum Operating Temperature

-55 °C

Product details

UltraFET® MOSFET, Fairchild Semiconductor

UItraFET® Trench MOSFET combine characteristics that enable benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge.
Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
You may be interested in