Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
128 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Typical Gate Charge @ Vgs
48 nC @ 10 V
Length
10.36mm
Width
4.67mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Height
15.21mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Country of Origin
China
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1.400 OMR
Each (In a Pack of 2) (ex VAT)
1.470 OMR
Each (In a Pack of 2) (inc VAT)
2
1.400 OMR
Each (In a Pack of 2) (ex VAT)
1.470 OMR
Each (In a Pack of 2) (inc VAT)
2
Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
128 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Typical Gate Charge @ Vgs
48 nC @ 10 V
Length
10.36mm
Width
4.67mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Height
15.21mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Country of Origin
China