Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
12 A
Maximum Collector Emitter Voltage
400 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
100 W
Minimum DC Current Gain
8, 15
Transistor Configuration
Single
Maximum Collector Base Voltage
700 V
Maximum Emitter Base Voltage
9 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
9.9 x 4.5 x 9.2mm
Maximum Operating Temperature
+150 °C
Product details
High Voltage NPN Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
32.725 OMR
0.654 OMR Each (In a Tube of 50) (ex VAT)
34.361 OMR
0.687 OMR Each (In a Tube of 50) (inc. VAT)
50
32.725 OMR
0.654 OMR Each (In a Tube of 50) (ex VAT)
34.361 OMR
0.687 OMR Each (In a Tube of 50) (inc. VAT)
Stock information temporarily unavailable.
50
Stock information temporarily unavailable.
Quantity | Unit price | Per Tube |
---|---|---|
50 - 50 | 0.654 OMR | 32.725 OMR |
100+ | 0.506 OMR | 25.300 OMR |
Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
12 A
Maximum Collector Emitter Voltage
400 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
100 W
Minimum DC Current Gain
8, 15
Transistor Configuration
Single
Maximum Collector Base Voltage
700 V
Maximum Emitter Base Voltage
9 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
9.9 x 4.5 x 9.2mm
Maximum Operating Temperature
+150 °C
Product details
High Voltage NPN Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.