onsemi SiC Power SiC N-Channel MOSFET, 142 A, 650 V, 4-Pin TO-247-4 NTH4L015N065SC1
Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
142 A
Maximum Drain Source Voltage
650 V
Series
SiC Power
Package Type
TO-247-4
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
0.012 Ω
Maximum Gate Threshold Voltage
4.3V
Number of Elements per Chip
1
Transistor Material
SiC
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10.620 OMR
10.620 OMR Each (ex VAT)
11.151 OMR
11.151 OMR Each (inc. VAT)
Standard
1
10.620 OMR
10.620 OMR Each (ex VAT)
11.151 OMR
11.151 OMR Each (inc. VAT)
Stock information temporarily unavailable.
Standard
1
Stock information temporarily unavailable.
| Quantity | Unit price |
|---|---|
| 1 - 9 | 10.620 OMR |
| 10 - 99 | 9.378 OMR |
| 100+ | 8.332 OMR |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
142 A
Maximum Drain Source Voltage
650 V
Series
SiC Power
Package Type
TO-247-4
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
0.012 Ω
Maximum Gate Threshold Voltage
4.3V
Number of Elements per Chip
1
Transistor Material
SiC
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products