Technical Document
Specifications
Brand
SemikronMaximum Continuous Collector Current
1.1 kA
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
20V
Package Type
SEMiX®3p
Configuration
Series
Mounting Type
Through Hole
Channel Type
N
Pin Count
11
Transistor Configuration
Series
Dimensions
150 x 62.4 x 17mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+175 °C
PRICED TO CLEAR
Yes
Product details
SEMiX® Dual IGBT Modules
Dual IGBT Modules from Semikron in modern low-profile SEMiX® packages suitable for half-bridge power control applications. The modules use solder-free spring or press-fit contacts to allow for a gate driver mounted directly on top of the module, saving space and offering greater connection reliability. Typical applications include AC inverter drives, UPS, Electronic Welding and Renewable Energy Systems.
For suitable press-fit gate driver modules see 122-0385 to 122-0387
Low profile solder-free mounting package
Trenchgate technology IGBTs
VCE(sat) has positive temperature coefficient
High short circuit current capability
Press-fit pins as auxiliary contacts
UL recognized
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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171.960 OMR
Each (ex VAT)
180.558 OMR
Each (inc VAT)
1
171.960 OMR
Each (ex VAT)
180.558 OMR
Each (inc VAT)
1
Buy in bulk
quantity | Unit price |
---|---|
1 - 1 | 171.960 OMR |
2+ | 168.525 OMR |
Technical Document
Specifications
Brand
SemikronMaximum Continuous Collector Current
1.1 kA
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
20V
Package Type
SEMiX®3p
Configuration
Series
Mounting Type
Through Hole
Channel Type
N
Pin Count
11
Transistor Configuration
Series
Dimensions
150 x 62.4 x 17mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+175 °C
PRICED TO CLEAR
Yes
Product details
SEMiX® Dual IGBT Modules
Dual IGBT Modules from Semikron in modern low-profile SEMiX® packages suitable for half-bridge power control applications. The modules use solder-free spring or press-fit contacts to allow for a gate driver mounted directly on top of the module, saving space and offering greater connection reliability. Typical applications include AC inverter drives, UPS, Electronic Welding and Renewable Energy Systems.
For suitable press-fit gate driver modules see 122-0385 to 122-0387
Low profile solder-free mounting package
Trenchgate technology IGBTs
VCE(sat) has positive temperature coefficient
High short circuit current capability
Press-fit pins as auxiliary contacts
UL recognized
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.