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N-Channel MOSFET, 18 A, 200 V, 3-Pin DPAK STMicroelectronics STD25NF20

RS Stock No.: 165-6596Brand: STMicroelectronicsManufacturers Part No.: STD25NF20
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

18 A

Maximum Drain Source Voltage

200 V

Series

STripFET

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

125 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

6.2mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

6.6mm

Typical Gate Charge @ Vgs

28 nC @ 10 V

Height

2.4mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

N-Channel STripFET™, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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1,600.000 OMR

0.640 OMR Each (On a Reel of 2500) (ex VAT)

1,680.000 OMR

0.672 OMR Each (On a Reel of 2500) (inc. VAT)

N-Channel MOSFET, 18 A, 200 V, 3-Pin DPAK STMicroelectronics STD25NF20

1,600.000 OMR

0.640 OMR Each (On a Reel of 2500) (ex VAT)

1,680.000 OMR

0.672 OMR Each (On a Reel of 2500) (inc. VAT)

N-Channel MOSFET, 18 A, 200 V, 3-Pin DPAK STMicroelectronics STD25NF20
Stock information temporarily unavailable.

Ideate. Create. Collaborate

JOIN FOR FREE

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

18 A

Maximum Drain Source Voltage

200 V

Series

STripFET

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

125 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

6.2mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

6.6mm

Typical Gate Charge @ Vgs

28 nC @ 10 V

Height

2.4mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

N-Channel STripFET™, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more