Technical Document
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current
30 A
Maximum Collector Emitter Voltage
420 V
Maximum Gate Emitter Voltage
16V
Maximum Power Dissipation
125 W
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
6.6 x 6.2 x 2.4mm
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Product details
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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0.840 OMR
Each (Supplied on a Reel) (ex VAT)
0.882 OMR
Each (Supplied on a Reel) (inc VAT)
5
0.840 OMR
Each (Supplied on a Reel) (ex VAT)
0.882 OMR
Each (Supplied on a Reel) (inc VAT)
5
Buy in bulk
quantity | Unit price | Per Reel |
---|---|---|
5 - 20 | 0.840 OMR | 4.200 OMR |
25 - 45 | 0.800 OMR | 4.000 OMR |
50 - 120 | 0.720 OMR | 3.600 OMR |
125 - 245 | 0.645 OMR | 3.225 OMR |
250+ | 0.615 OMR | 3.075 OMR |
Technical Document
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current
30 A
Maximum Collector Emitter Voltage
420 V
Maximum Gate Emitter Voltage
16V
Maximum Power Dissipation
125 W
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
6.6 x 6.2 x 2.4mm
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Product details
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.