Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
800 V
Series
MDmesh K5, SuperMESH5
Package Type
PowerFLAT 5 x 6
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
38 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
5.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.35mm
Typical Gate Charge @ Vgs
10.5 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
0.95mm
Minimum Operating Temperature
-55 °C
Product details
N-channel MDmesh™ K5 series, SuperMESH5™, STMicroelectronics
MOSFET Transistors, STMicroelectronics
5.390 OMR
1.078 OMR Each (Supplied as a Tape) (ex VAT)
5.660 OMR
1.132 OMR Each (Supplied as a Tape) (inc. VAT)
Standard
5
5.390 OMR
1.078 OMR Each (Supplied as a Tape) (ex VAT)
5.660 OMR
1.132 OMR Each (Supplied as a Tape) (inc. VAT)
Standard
5
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Tape |
---|---|---|
5 - 20 | 1.078 OMR | 5.390 OMR |
25 - 45 | 1.023 OMR | 5.115 OMR |
50 - 120 | 0.924 OMR | 4.620 OMR |
125 - 245 | 0.830 OMR | 4.152 OMR |
250+ | 0.798 OMR | 3.988 OMR |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
800 V
Series
MDmesh K5, SuperMESH5
Package Type
PowerFLAT 5 x 6
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
38 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
5.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.35mm
Typical Gate Charge @ Vgs
10.5 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
0.95mm
Minimum Operating Temperature
-55 °C
Product details