Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
900 V
Series
MDmesh, SuperMESH
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.3 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
160 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
72 nC @ 10 V
Width
5.15mm
Transistor Material
Si
Number of Elements per Chip
1
Length
15.75mm
Maximum Operating Temperature
+150 °C
Height
20.15mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
1.595 OMR
1.595 OMR Each (ex VAT)
1.675 OMR
1.675 OMR Each (inc. VAT)
Standard
1
1.595 OMR
1.595 OMR Each (ex VAT)
1.675 OMR
1.675 OMR Each (inc. VAT)
Standard
1
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price |
---|---|
1 - 9 | 1.595 OMR |
10 - 24 | 1.436 OMR |
25 - 99 | 1.364 OMR |
100 - 499 | 1.089 OMR |
500+ | 0.962 OMR |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
900 V
Series
MDmesh, SuperMESH
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.3 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
160 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
72 nC @ 10 V
Width
5.15mm
Transistor Material
Si
Number of Elements per Chip
1
Length
15.75mm
Maximum Operating Temperature
+150 °C
Height
20.15mm
Minimum Operating Temperature
-55 °C
Product details