Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
25 V
Package Type
SON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
7.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.4mm
Typical Gate Charge @ Vgs
6.5 nC @ 4.5 V
Width
3.4mm
Transistor Material
Si
Series
NexFET
Minimum Operating Temperature
-55 °C
Height
1.1mm
Product details
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
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0.580 OMR
Each (Supplied on a Reel) (ex VAT)
0.609 OMR
Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
5
0.580 OMR
Each (Supplied on a Reel) (ex VAT)
0.609 OMR
Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
5
Buy in bulk
quantity | Unit price | Per Reel |
---|---|---|
5 - 45 | 0.580 OMR | 2.900 OMR |
50 - 95 | 0.460 OMR | 2.300 OMR |
100 - 245 | 0.355 OMR | 1.775 OMR |
250 - 495 | 0.335 OMR | 1.675 OMR |
500+ | 0.320 OMR | 1.600 OMR |
Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
25 V
Package Type
SON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
7.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.4mm
Typical Gate Charge @ Vgs
6.5 nC @ 4.5 V
Width
3.4mm
Transistor Material
Si
Series
NexFET
Minimum Operating Temperature
-55 °C
Height
1.1mm
Product details