Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
15.8 A
Maximum Drain Source Voltage
600 V
Series
DTMOSIV
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
230 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
130 W
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.45mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
10.16mm
Typical Gate Charge @ Vgs
43 nC @ 10 V
Height
15.1mm
Forward Diode Voltage
1.7V
Country of Origin
Japan
Product details
MOSFET Transistors, Toshiba
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Please check again later.
2.900 OMR
0.580 OMR Each (In a Pack of 5) (ex VAT)
3.045 OMR
0.609 OMR Each (In a Pack of 5) (inc. VAT)
5
2.900 OMR
0.580 OMR Each (In a Pack of 5) (ex VAT)
3.045 OMR
0.609 OMR Each (In a Pack of 5) (inc. VAT)
5
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
5 - 20 | 0.580 OMR | 2.900 OMR |
25 - 45 | 0.355 OMR | 1.775 OMR |
50+ | 0.330 OMR | 1.650 OMR |
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
15.8 A
Maximum Drain Source Voltage
600 V
Series
DTMOSIV
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
230 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
130 W
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.45mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
10.16mm
Typical Gate Charge @ Vgs
43 nC @ 10 V
Height
15.1mm
Forward Diode Voltage
1.7V
Country of Origin
Japan
Product details