Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
600 V
Series
DTMOSIV
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
175 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
165 W
Maximum Gate Source Voltage
-30 V, +30 V
Width
5.02mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
15.94mm
Typical Gate Charge @ Vgs
55 nC @ 10 V
Height
20.95mm
Forward Diode Voltage
1.7V
Country of Origin
Japan
Product details
MOSFET N-Channel, TK2x Series, Toshiba
MOSFET Transistors, Toshiba
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6.675 OMR
1.335 OMR Each (In a Pack of 5) (ex VAT)
7.009 OMR
1.402 OMR Each (In a Pack of 5) (inc. VAT)
5
6.675 OMR
1.335 OMR Each (In a Pack of 5) (ex VAT)
7.009 OMR
1.402 OMR Each (In a Pack of 5) (inc. VAT)
5
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
5 - 20 | 1.335 OMR | 6.675 OMR |
25 - 45 | 1.205 OMR | 6.025 OMR |
50+ | 1.110 OMR | 5.550 OMR |
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
600 V
Series
DTMOSIV
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
175 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
165 W
Maximum Gate Source Voltage
-30 V, +30 V
Width
5.02mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
15.94mm
Typical Gate Charge @ Vgs
55 nC @ 10 V
Height
20.95mm
Forward Diode Voltage
1.7V
Country of Origin
Japan
Product details