Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
1.8 A
Maximum Drain Source Voltage
200 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
11 nC @ 10 V
Width
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Maximum Operating Temperature
+150 °C
Height
9.01mm
Minimum Operating Temperature
-55 °C
Product details
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
0.803 OMR
0.803 OMR Each (ex VAT)
0.843 OMR
0.843 OMR Each (inc. VAT)
Standard
1
0.803 OMR
0.803 OMR Each (ex VAT)
0.843 OMR
0.843 OMR Each (inc. VAT)
Standard
1
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price |
---|---|
1 - 9 | 0.803 OMR |
10 - 49 | 0.742 OMR |
50 - 99 | 0.715 OMR |
100 - 249 | 0.649 OMR |
250+ | 0.616 OMR |
Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
1.8 A
Maximum Drain Source Voltage
200 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
11 nC @ 10 V
Width
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Maximum Operating Temperature
+150 °C
Height
9.01mm
Minimum Operating Temperature
-55 °C
Product details