Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
3.1 A
Maximum Drain Source Voltage
1000 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Typical Gate Charge @ Vgs
80 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
9.01mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
37.400 OMR
0.748 OMR Each (In a Tube of 50) (ex VAT)
39.270 OMR
0.785 OMR Each (In a Tube of 50) (inc. VAT)
50
37.400 OMR
0.748 OMR Each (In a Tube of 50) (ex VAT)
39.270 OMR
0.785 OMR Each (In a Tube of 50) (inc. VAT)
50
Stock information temporarily unavailable.
Please check again later.
Quantity | Unit price | Per Tube |
---|---|---|
50 - 50 | 0.748 OMR | 37.400 OMR |
100 - 200 | 0.638 OMR | 31.900 OMR |
250+ | 0.600 OMR | 29.975 OMR |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
3.1 A
Maximum Drain Source Voltage
1000 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Typical Gate Charge @ Vgs
80 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
9.01mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details