Vishay TrenchFET N-Channel MOSFET, 100 A, 30 V, 8-Pin PowerPAK SO-8 SIRA00DP-T1-GE3
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
30 V
Series
TrenchFET
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
1.35 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
6.25mm
Typical Gate Charge @ Vgs
147 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
5.26mm
Minimum Operating Temperature
-55 °C
Height
1.12mm
Product details
N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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P.O.A.
Each (Supplied on a Reel) (ex VAT)
Production pack (Reel)
5
P.O.A.
Each (Supplied on a Reel) (ex VAT)
Production pack (Reel)
5
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Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
30 V
Series
TrenchFET
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
1.35 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
6.25mm
Typical Gate Charge @ Vgs
147 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
5.26mm
Minimum Operating Temperature
-55 °C
Height
1.12mm
Product details
N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products