Technical Document
Specifications
Brand
DiodesZetexMounting Type
Surface Mount
Package Type
SOT-363 (SC-88)
Maximum Continuous Forward Current
200mA
Peak Reverse Repetitive Voltage
30V
Diode Configuration
Array
Rectifier Type
Schottky Rectifier
Diode Type
Schottky
Pin Count
6
Maximum Forward Voltage Drop
1V
Number of Elements per Chip
8
Diode Technology
Schottky
Peak Reverse Recovery Time
5ns
Peak Non-Repetitive Forward Surge Current
600mA
Country of Origin
China
Product details
Schottky Barrier Diodes, up to 250mA, Diodes Inc
Super Barrier Rectifiers (SBR) diodes are the next generation of rectifiers. The two terminal device has a lower forward voltage (VF) than comparable Schottky diodes while possessing the thermal stability and high reliability characteristics of PN epitaxial diodes.
Diodes and Rectifiers, Diodes Inc
3.135 OMR
0.314 OMR Each (Supplied as a Tape) (ex VAT)
3.292 OMR
0.330 OMR Each (Supplied as a Tape) (inc. VAT)
Standard
10
3.135 OMR
0.314 OMR Each (Supplied as a Tape) (ex VAT)
3.292 OMR
0.330 OMR Each (Supplied as a Tape) (inc. VAT)
Standard
10
Stock information temporarily unavailable.
Please check again later.
Quantity | Unit price | Per Tape |
---|---|---|
10 - 20 | 0.314 OMR | 3.135 OMR |
30 - 140 | 0.258 OMR | 2.585 OMR |
150 - 740 | 0.226 OMR | 2.255 OMR |
750 - 1490 | 0.204 OMR | 2.035 OMR |
1500+ | 0.165 OMR | 1.650 OMR |
Technical Document
Specifications
Brand
DiodesZetexMounting Type
Surface Mount
Package Type
SOT-363 (SC-88)
Maximum Continuous Forward Current
200mA
Peak Reverse Repetitive Voltage
30V
Diode Configuration
Array
Rectifier Type
Schottky Rectifier
Diode Type
Schottky
Pin Count
6
Maximum Forward Voltage Drop
1V
Number of Elements per Chip
8
Diode Technology
Schottky
Peak Reverse Recovery Time
5ns
Peak Non-Repetitive Forward Surge Current
600mA
Country of Origin
China
Product details
Schottky Barrier Diodes, up to 250mA, Diodes Inc
Super Barrier Rectifiers (SBR) diodes are the next generation of rectifiers. The two terminal device has a lower forward voltage (VF) than comparable Schottky diodes while possessing the thermal stability and high reliability characteristics of PN epitaxial diodes.