Technical Document
Specifications
Brand
DiodesZetexMounting Type
Through Hole
Package Type
TO-220AB
Maximum Continuous Forward Current
20A
Peak Reverse Repetitive Voltage
100V
Diode Configuration
Common Cathode
Rectifier Type
Schottky Rectifier
Diode Type
Schottky
Pin Count
3
Maximum Forward Voltage Drop
820mV
Number of Elements per Chip
2
Diode Technology
Schottky
Peak Non-Repetitive Forward Surge Current
150A
Country of Origin
China
Product details
Schottky Barrier Diodes, 10A to 60A, Diodes Inc
Super Barrier Rectifiers (SBR) diodes are the next generation of rectifiers. The two terminal device has a lower forward voltage (VF) than comparable Schottky diodes while possessing the thermal stability and high reliability characteristics of PN epitaxial diodes.
Diodes and Rectifiers, Diodes Inc
15.675 OMR
0.314 OMR Each (In a Tube of 50) (ex VAT)
16.459 OMR
0.330 OMR Each (In a Tube of 50) (inc. VAT)
50
15.675 OMR
0.314 OMR Each (In a Tube of 50) (ex VAT)
16.459 OMR
0.330 OMR Each (In a Tube of 50) (inc. VAT)
Stock information temporarily unavailable.
50
Stock information temporarily unavailable.
Quantity | Unit price | Per Tube |
---|---|---|
50 - 200 | 0.314 OMR | 15.675 OMR |
250 - 950 | 0.270 OMR | 13.475 OMR |
1000 - 2450 | 0.264 OMR | 13.200 OMR |
2500+ | 0.264 OMR | 13.200 OMR |
Technical Document
Specifications
Brand
DiodesZetexMounting Type
Through Hole
Package Type
TO-220AB
Maximum Continuous Forward Current
20A
Peak Reverse Repetitive Voltage
100V
Diode Configuration
Common Cathode
Rectifier Type
Schottky Rectifier
Diode Type
Schottky
Pin Count
3
Maximum Forward Voltage Drop
820mV
Number of Elements per Chip
2
Diode Technology
Schottky
Peak Non-Repetitive Forward Surge Current
150A
Country of Origin
China
Product details
Schottky Barrier Diodes, 10A to 60A, Diodes Inc
Super Barrier Rectifiers (SBR) diodes are the next generation of rectifiers. The two terminal device has a lower forward voltage (VF) than comparable Schottky diodes while possessing the thermal stability and high reliability characteristics of PN epitaxial diodes.