Technical Document
Specifications
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
7.5 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
70 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
3.9 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
29.6 nC @ 10 V
Width
3.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.7mm
Minimum Operating Temperature
-55 °C
Height
1.8mm
Product details
P-Channel MOSFET, 30V, Diodes Inc
MOSFET Transistors, Diodes Inc.
2.200 OMR
0.440 OMR Each (In a Pack of 5) (ex VAT)
2.310 OMR
0.462 OMR Each (In a Pack of 5) (inc. VAT)
Standard
5
2.200 OMR
0.440 OMR Each (In a Pack of 5) (ex VAT)
2.310 OMR
0.462 OMR Each (In a Pack of 5) (inc. VAT)
Stock information temporarily unavailable.
Standard
5
Stock information temporarily unavailable.
Quantity | Unit price | Per Pack |
---|---|---|
5 - 20 | 0.440 OMR | 2.200 OMR |
25 - 45 | 0.314 OMR | 1.568 OMR |
50 - 245 | 0.275 OMR | 1.375 OMR |
250 - 495 | 0.242 OMR | 1.210 OMR |
500+ | 0.236 OMR | 1.182 OMR |
Technical Document
Specifications
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
7.5 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
70 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
3.9 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
29.6 nC @ 10 V
Width
3.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.7mm
Minimum Operating Temperature
-55 °C
Height
1.8mm
Product details