Infineon AIM SiC N-Channel MOSFET, 31 A, 1200 V, 4-Pin PG-TO247-4 AIMZH120R080M1TXKSA1
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
31 A
Maximum Drain Source Voltage
1200 V
Series
AIM
Package Type
PG-TO247-4
Mounting Type
Through Hole
Pin Count
4
Channel Mode
Enhancement
Transistor Material
SiC
Number of Elements per Chip
1
Country of Origin
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
6.292 OMR
6.292 OMR Each (ex VAT)
6.607 OMR
6.607 OMR Each (inc. VAT)
1
6.292 OMR
6.292 OMR Each (ex VAT)
6.607 OMR
6.607 OMR Each (inc. VAT)
1
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price |
|---|---|
| 1 - 9 | 6.292 OMR |
| 10 - 99 | 5.808 OMR |
| 100 - 499 | 5.478 OMR |
| 500 - 999 | 5.192 OMR |
| 1000+ | 4.785 OMR |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
31 A
Maximum Drain Source Voltage
1200 V
Series
AIM
Package Type
PG-TO247-4
Mounting Type
Through Hole
Pin Count
4
Channel Mode
Enhancement
Transistor Material
SiC
Number of Elements per Chip
1
Country of Origin
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products