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Infineon FZ400R12KE3B1HOSA1 Single IGBT Module, 650 A 1200 V, 5-Pin 62MM Module, Panel Mount

RS Stock No.: 838-6908Brand: InfineonManufacturers Part No.: FZ400R12KE3B1HOSA1
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Technical Document

Specifications

Maximum Continuous Collector Current

650 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

2.25 kW

Package Type

62MM Module

Configuration

Single

Mounting Type

Panel Mount

Channel Type

N

Pin Count

5

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

106.4 x 61.4 x 36.5mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+125 °C

Product details

IGBT Modules, Infineon

The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBT’s can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.

Package styles include: 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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Stock information temporarily unavailable.

68.932 OMR

68.932 OMR Each (ex VAT)

72.379 OMR

72.379 OMR Each (inc. VAT)

Infineon FZ400R12KE3B1HOSA1 Single IGBT Module, 650 A 1200 V, 5-Pin 62MM Module, Panel Mount

68.932 OMR

68.932 OMR Each (ex VAT)

72.379 OMR

72.379 OMR Each (inc. VAT)

Infineon FZ400R12KE3B1HOSA1 Single IGBT Module, 650 A 1200 V, 5-Pin 62MM Module, Panel Mount
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

quantityUnit price
1 - 168.932 OMR
2 - 467.552 OMR
5+65.483 OMR

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Maximum Continuous Collector Current

650 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

2.25 kW

Package Type

62MM Module

Configuration

Single

Mounting Type

Panel Mount

Channel Type

N

Pin Count

5

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

106.4 x 61.4 x 36.5mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+125 °C

Product details

IGBT Modules, Infineon

The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBT’s can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.

Package styles include: 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more