Infineon Dual SiC N-Channel MOSFET, 122 A, 40 V, 3-Pin PG-TO263-3 IPB023N04NF2SATMA1
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
122 A
Maximum Drain Source Voltage
40 V
Package Type
PG-TO263-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
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387.200 OMR
0.484 OMR Each (On a Reel of 800) (ex VAT)
406.560 OMR
0.508 OMR Each (On a Reel of 800) (inc. VAT)
800
387.200 OMR
0.484 OMR Each (On a Reel of 800) (ex VAT)
406.560 OMR
0.508 OMR Each (On a Reel of 800) (inc. VAT)
Stock information temporarily unavailable.
800
Stock information temporarily unavailable.
Ideate. Create. Collaborate
JOIN FOR FREE
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- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
122 A
Maximum Drain Source Voltage
40 V
Package Type
PG-TO263-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products